r07ds0925ej0400 rev.4.00 page 1 of 6 mar 22, 2013 preliminary datasheet rjk0393dpa 30v, 40a, 4.3m ? max. n channel power mos fet high speed power switching features ? high speed switching ? capable of 4.5v gate drive ? low drive current ? high density mounting ? low on-resistance ? pb-free ? halogen-free outline renesas package code: pwsn0008de-a (package name: wpak(3f)) g d sss ddd 4 123 5678 1, 2, 3 source 4 gate 5, 6, 7, 8 drain 876 5 2 1 34 absolute maximum ratings (ta = 25c) item symbol ratings unit drain to source voltage v dss 30 v gate to source voltage v gss ? 20 v drain current i d 40 a drain peak current i d(pulse) note1 160 a body-drain diode reverse drain current i dr 40 a avalanche current i ap note 2 16 a avalanche energy e ar note 2 25.6 mj channel dissipation pch note3 40 w channel to case thermal impedance ? ch-c 3.13 ?c/w channel temperature tch 150 ?c storage temperature tstg ?55 to +150 ?c notes: 1. pw ? 10 ? s, duty cycle ? 1% 2. value at tch = 25 ?c, rg ? 50 ? 3. tc = 25 ?c r07ds0925ej0400 rev.4.00 mar 22, 2013
rjk0393dpa preliminary r07ds0925ej0400 rev.4.00 page 2 of 6 mar 22, 2013 electrical characteristics (ta = 25c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 30 ? ? v i d = 10 ma, v gs = 0 gate to source leak current i gss ? ? ? 0.1 ? a v gs = ? 20 v, v ds = 0 zero gate voltage drain current i dss ? ? 1 ? a v ds = 30 v, v gs = 0 gate to source cutoff voltage v gs(off) 1.2 ? 2.5 v v ds = 10 v, i d = 1 ma r ds(on) ? 3.3 4.3 m ? i d = 20 a, v gs = 10 v note4 static drain to source on state resistance r ds(on) ? 4.2 5.9 m ? i d = 20 a, v gs = 4.5 v note4 forward transfer admittance |y fs | ? 100 ? s i d = 20 a, v ds = 10 v note4 input capacitance ciss ? 3270 ? pf output capacitance coss ? 430 ? pf reverse transfer capacitance crss ? 225 ? pf v ds = 10 v, v gs = 0, f = 1 mhz gate resistance rg ? 1.4 ? ? total gate charge qg ? 21 ? nc gate to source charge qgs ? 9.5 ? nc gate to drain charge qgd ? 4.7 ? nc v dd = 10 v, v gs = 4.5 v, i d = 40 a turn-on delay time t d(on) ? 13.2 ? ns rise time t r ? 6.0 ? ns turn-off delay time t d(off) ? 52 ? ns fall time t f ? 7.1 ? ns v gs = 10 v, i d = 20 a, v dd ? 10 v, r l = 0.5 ? , rg = 4.7 ? body?drain diode forward voltage v df ? 0.83 1.08 v if = 40 a, v gs = 0 note4 body?drain diode reverse recovery time t rr ? 23.5 ? ns if = 40 a, v gs = 0 di f / dt = 100 a/ ? s notes: 4. pulse test
rjk0393dpa preliminary r07ds0925ej0400 rev.4.00 page 3 of 6 mar 22, 2013 main characteristics channel dissipation pch (w) case temperature tc (c) power vs. temperature derating drain to source voltage v ds (v) gate to source voltage v gs (v) drain current i d (a) maximum safe operation area 80 60 40 20 0 50 100 150 200 100 10 1 0.1 0.1 0.3 1 3 10 30 100 1000 tc = 25 c 1 shot pulse operation in this area is limited by r ds(on) 1 ms dc operation 10ms gate to source voltage v gs (v) static drain to source on state resistance r ds(on) (m) drain to source saturation voltage vs. gate to source voltage drain current i d (a) static drain to source on state resistance vs. drain current 200 160 120 80 40 0 4 8 12 16 20 20 10 2 5 1 30 300 pulse test i d = 20 a 5 a 10 a 1 10 100 1000 3 100 50 v gs = 4.5 v 10 v pulse test drain to source voltage v ds (v) drain current i d (a) typical output characteristics drain current i d (a) typical transfer characteristics 50 40 30 20 10 0 246810 50 40 30 20 10 0 1234 5 tc = 75c 25c ?25c v ds = 10 v pulse test v gs = 2.4 v 10 v 4.5 v 2.5 v pulse test 2.7 v 2.9 v 10 s 100 s drain to source saturation voltage v ds(on) (mv)
rjk0393dpa preliminary r07ds0925ej0400 rev.4.00 page 4 of 6 mar 22, 2013 case temperature tc (c) static drain to source on state resistance vs. temperature 10 8 6 4 2 ?25 0 25 50 75 150 100 125 0 v gs = 4.5 v 10 v i d = 5 a, 10 a, 20 a 5 a, 10 a, 20 a capacitance c (pf) drain to source voltage v ds (v) typical capacitance vs. drain to source voltage 0 102030 10000 3000 1000 300 100 30 10 ciss coss crss v gs = 0 f = 1 mhz 50 40 30 20 10 0 20 16 12 8 4 10 20 30 40 50 0 i d = 40 a v gs v ds v dd = 25 v 10 v v dd = 25 v 10 v gate charge qg (nc) drain to source voltage v ds (v) gate to source voltage v gs (v) dynamic input characteristics source to drain voltage v sd (v) reverse drain current i dr (a) 50 40 30 20 10 0 0.4 0.8 1.2 1.6 2.0 reverse drain current vs. source to drain voltage 5 v 10 v 50 40 30 20 10 25 50 75 100 125 150 0 channel temperature tch (c) repetitive avalanche energy e ar (mj) maximum avalanche energy vs. channel temperature derating static drain to source on state resistance r ds(on) (m) pulse test pulse test i ap = 16 a v dd = 15 v duty < 0.1% rg 50 v gs = 0, ?5 v
rjk0393dpa preliminary r07ds0925ej0400 rev.4.00 page 5 of 6 mar 22, 2013 1 pulse width pw (s) normalized transient thermal impedance vs. pulse width 1 m 10 m 100 m 10 100 10 10 1 0.1 0.01 d = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse vin monitor d.u.t. vin 10 v r l v ds = 10 v t r t d(on) vin 90% 90% 10% 10% vout t d(off) vout monitor 90% 10% t f switching time test circuit switching time waveform rg d. u. t rg i ap monitor v ds monitor v dd 50 vin 15 v 0 i d v ds i ap v (br)dss l v dd e ar = l ? i ap 2 ? 2 1 v dss v dss ? v dd avalanche test circuit avalanche waveform normalized transient thermal impedance s (t) dm p pw t d = pw t ch ? c(t) = s (t) ? ch ? c ch ? c = 3.13c/w, tc = 25 c
rjk0393dpa preliminary r07ds0925ej0400 rev.4.00 page 6 of 6 mar 22, 2013 package dimensions 4.23typ 5.9 0.21typ 0.85max 6.1 1.27typ +0.1 -0.2 +0.1 -0.3 1.27typ 0.05max 0min 0.545typ stand-off 5.1 0.2 4.90 0.1 0.5 0.15 3.6 0.20 .5 0.15 0.42 0.08 3.92 0.22 pw s n 0008 de- a w pak ( 3f )v 0.075 g mass[t y p. ] rene s a s c od e jeita packa g e cod e previous c od e (sn plating) notice:the reverse pattern of die-pad support lead described above exists. unit: mm packa g e nam e w pak ( 3f ) ordering information orderable part number quan tity shipping container RJK0393DPA-00-J5A 3000 pcs taping note: the symbol of 2nd "-" is occasionally presented as "#".
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